TSMC N3E와 삼성파운드리 3GAE의 비교 #Comparison between TSMC N3E and Samsung 3GAE

 

Q

TSMC N3E와 삼성파운드리 3GAE의 비교해줘

---

A

(N3E에 대한 자료가 부족함)

1)

TSMC의 N3E는 N3(3nm급) 공정의 개선 버전으로, 10~15% 향상된 성능, 25~30% 전력 절감, 

최대 1.7배 향상된 트랜지스터 밀도[1] 등 N5에 비해 노드가 완전히 개선될 것으로 예상됩니다. 

TSMC는 삼성 파운드리가 3GAE(3나노급, 게이트 일체형 공정)[2]를 사용하여 대량 생산을 시작한 지 몇 달 후에 

N3 공정에 기반한 칩을 양산하기 시작했습니다. 

TSMC가 공개한 N3의 공정 특성은 삼성이 공개한 3GAE의 특성과 비슷할 것으로 예상되며, 

TSMC는 트랜지스터 밀도는 높지만 성능과 전력 효율은 낮습니다[3]. 

따라서 현재로서는 TSMC N3E와 삼성 3GAE의 비교가 명확하지 않습니다.

 

Translated with DeepL

 

---

2)

TSMC의 N3E는 N3(3nm급) 공정의 개선된 버전으로, N5에 비해 10%~15% 향상된 성능, 25%~30% 전력 감소, 최대 1.7배의 노드 개선을 가져올 것으로 예상됩니다. 트랜지스터 밀도 향상[1]. 

TSMC는 Samsung Foundry가 3GAE(3nm급 게이트 올 어라운드 공정)를 사용하여 대량 생산을 시작한 지 

몇 달 후에 N3 공정을 기반으로 칩을 대량 생산하기 시작했습니다[2]. 

TSMC가 N3에 대해 공개한 프로세스 특성은 3GAE에 대한 삼성의 공개와 밀접하게 추적될 것으로 예상되며, 

TSMC는 트랜지스터 밀도는 더 높지만 성능과 전력 효율은 더 낮습니다[3]. 

따라서 TSMC N3E와 Samsung 3GAE 간의 비교는 사용 가능한 소스에서 명확하지 않습니다.

 

Translated with Google

 

레퍼런스 (WebChatGPT)

[1] "N3E: An Improved 3nm Node Pulled In (Almost) TSMCs N3 is set to bring in full node improvements over N5, which includes 10% ~ 15% more performance, 25% ~ 30% power reduction, and an up to 1.7X ..." URL: https://www.anandtech.com/show/17356/tsmc-roadmap-update-n3e-in-2024-n2-in-2026-major-changes-incoming

TSMC Roadmap Update: N3E in 2024, N2 in 2026, Major Changes Incoming

[2] "TSMC began mass production of chips based on its first N3 (3nm-class) fabrication process several months after Samsung Foundry kicked off high-volume manufacturing using its 3GAE (3nm-class, gate ..." URL: https://www.tomshardware.com/news/analysts-estimate-tsmc-n3-yields-between-60-and-80-percent

Analysts Estimate TSMC's 3nm Yields Between 60% and 80%

[3] "N3 is planned to enter risk production in 2021 and enter volume production in 2H22. TSMCs disclosed process characteristics on N3 would track closely with Samsungs disclosures on 3GAE in ..." URL: https://www.anandtech.com/show/16024/tsmc-details-3nm-process-technology-details-full-node-scaling-for-2h22

TSMC Details 3nm Process Technology: Full Node Scaling for 2H22 Volume Production

 

TSMC's N3E is an improved version of its N3 (3nm-class) process, which is expected to bring in full node improvements over N5, including 10% to 15% more performance, 25% to 30% power reduction, and up to 1.7X improvement in transistor density [1]. TSMC began mass production of chips based on its N3 process several months after Samsung Foundry started high-volume manufacturing using its 3GAE (3nm-class, gate-all-around process) [2]. TSMC's disclosed process characteristics on N3 are expected to track closely with Samsung's disclosures on 3GAE, with TSMC having higher transistor density but lower performance and power efficiency [3]. Therefore, the comparison between TSMC N3E and Samsung 3GAE is not clear from the available sources.